The largest 8-inch Integrated Device Manufacture (IDM) fully focused on GaN technology in the world.
Innoscience is a global leader in semiconductor manufacturing, specializing in GaN (Gallium Nitride) technology. As the largest 8-inch Integrated Device Manufacture (IDM) fully focused on GaN, Innoscience is dedicated to innovation and excellence in GaN power device manufacturing.
Innoscience's commitment to setting global standards for GaN device design and performance is evident in its extensive portfolio of products. These products are widely used in low-voltage, medium-voltage, and high-voltage applications, covering GaN process node voltages from 15V to 1200V. With a strong emphasis on superior performance, reliability, and functionality, Innoscience serves applications ranging from 20W to 20kW. The primary address of Innoscience is 1066 Lu Shen Ave, FOHO High-Tech Zone, Wujiang District, Suzhou, Jiangsu 215211, CN. Additional locations include 39 Jin Yuan Er Rd., Hi-Tech District, Zhuhai City, Guangdong Province 519085, CN; Philipssite 5, bus 01, Heverlee, Flemish Region 3001, BE; and 5451 Great America Pkwy, Santa Clara, California 95054, US.
With over 800 patents granted or pending, Innoscience continues to drive advancements in GaN technology, ensuring a bright future for the industry. We invite the management team at Innoscience to create a customized and exclusive company showcase and product listing on our platform to further enhance their market presence.
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